ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,532,457, issued on Jan. 20, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Semiconductor memory device and method of manufacturing the same" was invented by Hwanchul Jeon (Seoul, South Korea), Yeonsu Kim (Daejeon, South Korea), Youngsik Lee (Suwon-si, South Korea), Hyuk Kim (Seongnam-si, South Korea) and Sangwuk Park (Hwaseong-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device includes a substrate, contact electrodes extending in a first direction, each of the contact electrodes including a connection portion having a first thickness and a landing portion having a second thickness, an upp...