ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,532,460, issued on Jan. 20, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-Do, South Korea).
"Semiconductor memory device" was invented by Jin A Kim (Suwon-si, South Korea), Kang-Uk Kim (Suwon-si, South Korea), Sang Hoon Min (Suwon-si, South Korea) and Choong Hyun Lee (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device is provided. The semiconductor memory device comprises a substrate including a cell region having an active region defined by a cell element isolation layer, a peripheral region near the cell region, and a boundary region between the cell region and the peripheral region. The device ...