ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,532,478, issued on Jan. 20, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).
"Semiconductor devices with improved performance and reliability and manufacturing methods for the same" was invented by Kyunghwan Lee (Suwon-si, South Korea), Yongseok Kim (Suwon-si, South Korea), Hyuncheol Kim (Seoul, South Korea), Jongman Park (Hwaseong-si, South Korea), Dongsoo Woo (Seoul, South Korea) and Minjun Lee (Seoul, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a plurality of gate electrodes extending on a substrate in a first horizontal direction and each including first and second vertical extensio...