ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,527,239, issued on Jan. 13, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).
"Variable resistance memory device" was invented by Seyun Kim (Suwon-si, South Korea), Jinhong Kim (Seoul, South Korea), Soichiro Mizusaki (Suwon-si, South Korea), Jungho Yoon (Yongin-si, South Korea) and Youngjin Cho (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A variable resistance memory device includes a variable resistance layer, a first conductive element, and a second conductive element. The variable resistance layer includes a first layer and a second layer. The first layer is formed of a first material. The second layer ...