ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,526,994, issued on Jan. 13, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"Three dimensional semiconductor device and a method for manufacturing the same" was invented by Kyen-Hee Lee (Suwon-si, South Korea) and Kyungsoo Kim (Hwaseong-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A three dimensional semiconductor device includes first, second, third and fourth source/drain patterns sequentially stacked on a substrate, a contact structure on the first to fourth source/drain patterns and a contact line on the contact structure. The contact structure includes a first active contact on the first source/drain pattern,...