US Patent Issued to SAMSUNG ELECTRONICS on Jan. 13 for "Substrate processing method using low temperature developer and semiconductor device manufacturing apparatus using the same" (South Korean Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,523,935, issued on Jan. 13, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"Substrate processing method using low temperature developer and semiconductor device manufacturing apparatus using the same" was invented by Sangjine Park (Suwon-si, South Korea), Jihoon Jeong (Seongnam-si, South Korea), Younghoo Kim (Yongin-si, South Korea) and Kuntack Lee (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A substrate processing method includes supplying a first developer at a first temperature onto a substrate in a development device, thereby performing a development process, supplying a process fluid at a second tempe...