US Patent Issued to SAMSUNG ELECTRONICS on Jan. 13 for "Semiconductor memory device with mold insulating patterns, semiconductor patterns, and gate electrodes" (South Korean Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,526,975, issued on Jan. 13, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"Semiconductor memory device with mold insulating patterns, semiconductor patterns, and gate electrodes" was invented by Hyun Geun Choi (Suwon-si, South Korea) and Ki Seok Lee (Hwaseong-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "According to some embodiments of the present inventive concept, a semiconductor memory device includes a plurality of mold insulating layers on a substrate and spaced apart from one another, a plurality of semiconductor patterns which are between respective ones of the plurality of mold insulating layers adjacent...