ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,526,980, issued on Jan. 13, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Semiconductor device and method of fabricating the same" was invented by Se-Ho You (Seoul, South Korea) and Ju-Il Choi (Seongnam-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device including a substrate and first and second packages thereon, the first package includes a first lower redistribution layer; a first core semiconductor stack thereon and including a first core chip and a first through via stacked on the first lower redistribution layer; and a first memory semiconductor stack on the first lower redistribution laye...