US Patent Issued to SAMSUNG ELECTRONICS on Jan. 13 for "Semiconductor device and method of fabricating the same" (South Korean Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,527,069, issued on Jan. 13, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"Semiconductor device and method of fabricating the same" was invented by Cheol Kim (Hwaseong-si, South Korea) and Jongchul Park (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate including a first active pattern and a second active pattern, a gate electrode including a first gate electrode on the first active pattern and a second gate electrode on the second active pattern, a gate cutting pattern between the first and second gate electrodes, gate spacers on opposing side surfaces of the gate elect...