ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,527,097, issued on Jan. 13, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Photodiode and image sensor including the same" was invented by Chan-Wook Baik (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A photodiode according to an embodiment includes a semiconductor substrate, a Schottky junction structure layer disposed on the semiconductor substrate and including a first layer including a conductive material and a semiconductor layer, and a pinning layer disposed adjacent to the Schottky junction structure layer and fixing potentials of the semiconductor substrate and the first layer."
The patent was file...