ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,524,162, issued on Jan. 13, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Nonvolatile memory device and method of programming a nonvolatile memory" was invented by Yonghyuk Choi (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A nonvolatile memory device includes a memory block and a control circuit. The memory block includes cell strings. The control circuit controls a first program operation by dividing program data having threshold voltage distributions which have a plurality of states into a plurality of groups, discharging target bit-lines coupled to selected cell strings corresponding to the groups to ...