ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,525,297, issued on Jan. 13, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Nonvolatile memory device and memory package including the same" was invented by Hyunkook Park (Suwon-si, South Korea), Ahreum Kim (Suwon-si, South Korea) and Pansuk Kwak (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A nonvolatile memory device includes first and second semiconductor layers. The first semiconductor layer includes wordlines extending in a first direction, bitlines extending in a second direction, and a memory cell array connected to the wordlines and the bitlines. The second semiconductor layer is beneath the first s...