ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,527,004, issued on Jan. 13, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).

"Nonvolatile memory device and apparatus comprising the same" was invented by Hagyoul Bae (Hanam-si, South Korea), Jinseong Heo (Seoul, South Korea), Seunggeol Nam (Suwon-si, South Korea), Taehwan Moon (Suwon-si, South Korea) and Yunseong Lee (Osan-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A non-volatile memory device is provided. The nonvolatile memory device includes a metal pillar, a channel layer separated from the metal pillar and surrounding a side surface of the metal pillar, a source arranged on one end of the channel layer, ...