US Patent Issued to SAMSUNG ELECTRONICS on Jan. 13 for "Nitride semiconductor light emitting device" (South Korean Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,527,127, issued on Jan. 13, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Nitride semiconductor light emitting device" was invented by Youngjin Choi (Suwon-si, South Korea), Donggun Lee (Suwon-si, South Korea) and Punjae Choi (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A nitride semiconductor light emitting device includes an active layer provided between P-type and N-type nitride semiconductor layers, a first strain reducing layer including first InGaN films and first GaN films alternately stacked between the N-type nitride semiconductor layer and the active layer, and a second strain reducing layer in...