US Patent Issued to SAMSUNG ELECTRONICS on Jan. 13 for "Method of calibrating impedance of memory device and impedance calibration circuit performing the same" (South Korean Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,525,269, issued on Jan. 13, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"Method of calibrating impedance of memory device and impedance calibration circuit performing the same" was invented by Dongho Shin (Suwon-si, South Korea), Kangyoon Lee (Seoul, South Korea), Seonkyoo Lee (Suwon-si, South Korea) and Junha Lee (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of calibrating impedance of a memory device including a data transmitter includes: outputting a comparison signal by comparing a power supply voltage and a reference voltage, the power supply voltage being supplied to the data transmitter w...