ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,525,303, issued on Jan. 13, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"Memory device and operating method thereof" was invented by Yonghyuk Choi (Suwon-si, South Korea), Jaeduk Yu (Suwon-si, South Korea) and Yohan Lee (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a word line area that is between a bit line and a common source line. The word line area includes a plurality of stacks. A first area includes first stacks with a first resistance value in the word line area, a second area includes second stacks with a second resistance value in the word line area, wherein the second r...