ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,525,301, issued on Jan. 13, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).
"Memory device and method for improving sensing characteristics of memory cells" was invented by Minji Cho (Suwon-si, South Korea), Jisang Lee (Suwon-si, South Korea), Sehwan Park (Suwon-si, South Korea), Jinyoung Kim (Suwon-si, South Korea) and Joonsuc Jang (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method of operating a memory device including a memory cell array having a plurality of memory cells and a plurality of word lines connected to the plurality of memory cells. The method includes performing an additional read oper...