US Patent Issued to SAMSUNG ELECTRONICS on Jan. 13 for "Light emitting diodes containing deactivated regions and methods of making the same" (California Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,527,128, issued on Jan. 13, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Light emitting diodes containing deactivated regions and methods of making the same" was invented by Max Batres (Fremont, Calif.), Fariba Danesh (Los Altos Hills, Calif.), Michael J. Cich (Fremont, Calif.) and Zhen Chen (Dublin, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A light emitting device (LED) includes an n-doped semiconductor material layer, an active region including an optically active compound semiconductor layer stack configured to emit light located on the n-doped semiconductor material layer, a p-doped semiconductor material layer ...