ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,527,038, issued on Jan. 13, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-Do, South Korea).
"Electronic device including ferroelectric thin film structure" was invented by Jinseong Heo (Seoul, South Korea), Yunseong Lee (Osan-si, South Korea), Hyangsook Lee (Suwon-si, South Korea), Sanghyun Jo (Seoul, South Korea), Seunggeol Nam (Suwon-si, South Korea), Taehwan Moon (Suwon-si, South Korea), Hagyoul Bae (Hanam-si, South Korea), Eunha Lee (Seoul, South Korea) and Junho Lee (Seongnam-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "An electronic device includes: a substrate including a source, a drain, and a channel between the sourc...