US Patent Issued to SAMSUNG ELECTRONICS on Jan. 13 for "Capacitor and a dram device including the same" (South Korean Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,526,982, issued on Jan. 13, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"Capacitor and a dram device including the same" was invented by Kyooho Jung (Seoul, South Korea), Dongkwan Baek (Seoul, South Korea) and Cheoljin Cho (Hwaseong-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A capacitor may include a lower electrode, a dielectric layer structure on the lower electrode, and an upper electrode on the dielectric layer structure. The dielectric layer structure may include a plurality of dielectric layers and at least one insert layer structure between ones of the plurality of dielectric layers. The insert layer ...