US Patent Issued to SAMSUNG ELECTRONICS on Feb. 4 for "Vertical field-effect transistor devices having gate liner" (South Korean Inventors)

ALEXANDRIA, Va., Feb. 5 -- United States Patent no. 12,218,010, issued on Feb. 4, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (South Korea).

"Vertical field-effect transistor devices having gate liner" was invented by Hwi Chan Jun (Yongin-si, South Korea) and Min Gyu Kim (Hwaseong-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Vertical field-effect transistor (VFET) devices and methods of forming the same are provided. The methods may include forming a lower structure on a substrate. The lower structure may include first and second VFETs, a preliminary isolation structure between the first and second VFETs, and a gate liner on opposing sides of the preliminary isolation structure and between...