ALEXANDRIA, Va., Feb. 5 -- United States Patent no. 12,218,133, issued on Feb. 4, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Three-dimensional semiconductor device and method of fabricating the same" was invented by Sungil Park (Suwon-si, South Korea), Jae Hyun Park (Hwaseong-si, South Korea), Daewon Ha (Seoul, South Korea) and Kyuman Hwang (Daejeon, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a three-dimensional semiconductor device and its fabrication method. The semiconductor device includes a first active region on a substrate and including a plurality of lower channel patterns and a plurality of lower source/drain patterns that are alternately arran...