US Patent Issued to SAMSUNG ELECTRONICS on Feb. 4 for "Method of fabricating a semiconductor memory device including an extension gate cutting region" (South Korean Inventors)

ALEXANDRIA, Va., Feb. 5 -- United States Patent no. 12,218,062, issued on Feb. 4, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (South Korea).

"Method of fabricating a semiconductor memory device including an extension gate cutting region" was invented by Jun Hyoung Kim (Seoul, South Korea), Young-Jin Kwon (Suwon-si, South Korea) and Geun Won Lim (Yongin-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device, in which a cell array region and an extension region are arranged along a first direction, and in which contact regions and through regions are alternately arranged along the first direction in the extension region, including: a mold structure including a plurality of first...