US Patent Issued to SAMSUNG ELECTRONICS on Feb. 4 for "High electron mobility transistor and method of manufacturing the same" (South Korean Inventors)

ALEXANDRIA, Va., Feb. 5 -- United States Patent no. 12,218,233, issued on Feb. 4, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).

"High electron mobility transistor and method of manufacturing the same" was invented by Jaejoon Oh (Seongnam-si, South Korea) and Jongseob Kim (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A high electron mobility transistor and a method of manufacturing the same are disclosed. The high electron mobility transistor includes a channel layer, a channel supplying layer causing generation of a two-dimensional electron gas (2DEG) in the channel layer, a source electrode and a drain electrode provided on respective sides of the channel supp...