US Patent Issued to SAMSUNG ELECTRONICS on Feb. 3 for "Three-dimensional semiconductor memory devices including a first contact with a sidewall having a stepwise profile" (South Korean Inventors)

ALEXANDRIA, Va., Feb. 3 -- United States Patent no. RE50,782, issued on Feb. 3, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).

"Three-dimensional semiconductor memory devices including a first contact with a sidewall having a stepwise profile" was invented by Kwang-Ho Kim (Suwon-si, South Korea), Jihwan Yu (Suwon-si, South Korea) and Seunghyun Cho (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed is a three-dimensional semiconductor device including a stack structure on a substrate and including electrodes that are vertically stacked on top of each other on a first region of a substrate, a vertical structure penetrating the stack structure and including...