US Patent Issued to SAMSUNG ELECTRONICS on Feb. 3 for "Three-dimensional semiconductor memory device" (South Korean Inventors)

ALEXANDRIA, Va., Feb. 3 -- United States Patent no. 12,543,321, issued on Feb. 3, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"Three-dimensional semiconductor memory device" was invented by Myung Hun Lee (Seongnam-si, South Korea), Dong Ha Shin (Hwaseong-si, South Korea), Pan Suk Kwak (Goyang-si, South Korea) and Dae Seok Byeon (Seongnam-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device includes a mold structure including gate electrodes stacked on a first substrate, a channel structure that penetrates a first region of the mold structure to cross the gate electrodes, a first through structure that penetrates a second region of the mold str...