US Patent Issued to Samsung Electronics on Feb. 3 for "Semiconductor device including gate pattern having pad region" (South Korean Inventors)

ALEXANDRIA, Va., Feb. 3 -- United States Patent no. RE50,786, issued on Feb. 3, was assigned to Samsung Electronics Co. Ltd (Suwon-si, South Korea).

"Semiconductor device including gate pattern having pad region" was invented by Dong Ik Lee (Hwaseong-si, South Korea), Dai Hong Kim (Suwon-si, South Korea), Ji Woon Im (Hwaseong-si, South Korea), Se Mee Jang (Seoul, South Korea) and Bo Ra Nam (Busan, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a gate pattern disposed over a lower structure, and including a gate electrode region and a gate pad region extending from the gate electrode region; and a vertical channel semiconductor layer having a side surface facing the...