ALEXANDRIA, Va., Feb. 3 -- United States Patent no. 12,543,301, issued on Feb. 3, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).
"Semiconductor device" was invented by Daewon Ha (Seoul, South Korea), Mingyu Kim (Suwon-si, South Korea) and Doyoung Choi (Hwaseong-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device comprises an active pattern on a substrate, a pair of first source/drain patterns on the active pattern, a pair of second source/drain patterns on top surfaces of the first source/drain patterns, a gate electrode extending across the active pattern and having sidewalls that face the first and second source/drain patterns, a first channel str...