ALEXANDRIA, Va., Feb. 3 -- United States Patent no. 12,543,336, issued on Feb. 3, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"Methods of manufacturing semiconductor devices" was invented by Keunhwi Cho (Seoul, South Korea), Jinkyu Kim (Boryeong-si, South Korea), Myunggil Kang (Suwon-si, South Korea), Dongwon Kim (Seongnam-si, South Korea) and Kisung Suh (Yongin-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a semiconductor device includes forming a semiconductor structure extending from a substrate in a first direction and having first and second regions; forming a sacrificial gate pattern intersecting the first region of the semiconductor ...