US Patent Issued to SAMSUNG ELECTRONICS on Feb. 3 for "Metal-oxide-semiconductor field effect transistors including nanosheets" (South Korean Inventors)

ALEXANDRIA, Va., Feb. 3 -- United States Patent no. 12,543,354, issued on Feb. 3, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Metal-oxide-semiconductor field effect transistors including nanosheets" was invented by Jung Gun You (Suwon-si, South Korea) and Sug Hyun Sung (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate including first and second regions; a first active pattern including a first lower pattern and first sheet patterns; a second active pattern including a second lower pattern, a height of the second lower pattern being identical to a height of the first lower pattern, and second sheet patterns; a first gat...