ALEXANDRIA, Va., Feb. 3 -- United States Patent no. 12,543,305, issued on Feb. 3, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Memory device" was invented by Min Tae Ryu (Suwon-si, South Korea), Byong-Deok Choi (Seoul, South Korea), Sungwon Yoo (Suwon-si, South Korea), Wonsok Lee (Suwon-si, South Korea) and Yongsang Yoo (Seoul, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a first memory cell connected to a first bitline and a second memory cell connected to a second bitline, wherein the first memory cell may include a first access transistor including one end connected to the first bitline, and a first capacitor including one electrode connecte...