ALEXANDRIA, Va., Feb. 3 -- United States Patent no. 12,543,600, issued on Feb. 3, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).
"Memory device" was invented by Chajea Jo (Yongin-si, South Korea) and Inhyo Hwang (Asan-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device is provided. The memory device includes a first structure and a second structure stacked on the first structure in a vertical direction. The first structure includes a first substrate, peripheral circuitry, an auxiliary memory cell array, a first insulating layer, and a plurality of first bonding pads. The second structure includes a second substrate, a main memory cell array, a second insulati...