US Patent Issued to SAMSUNG ELECTRONICS on Feb. 3 for "Integrated circuit devices including stacked transistors and methods of forming the same" (New York, Virginia Inventors)

ALEXANDRIA, Va., Feb. 3 -- United States Patent no. 12,543,380, issued on Feb. 3, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (South Korea).

"Integrated circuit devices including stacked transistors and methods of forming the same" was invented by Keumseok Park (Slingerlands, N.Y.) and Kang-Ill Seo (Springfield, Va.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming an integrated circuit device includes providing a stacked transistor structure on a substrate. The stacked transistor structure includes a first channel pattern of a first transistor and a second channel pattern of a second transistor stacked on the first channel pattern. Second source/drain regions of the second transistor are f...