US Patent Issued to SAMSUNG ELECTRONICS on Feb. 3 for "Different diffusion break structures for three-dimensional stacked semiconductor device" (New York Inventors)

ALEXANDRIA, Va., Feb. 3 -- United States Patent no. 12,543,347, issued on Feb. 3, was assigned to SAMSUNG ELECTRONICS Co. LTD. (South Korea).

"Different diffusion break structures for three-dimensional stacked semiconductor device" was invented by Byounghak Hong (Albany, N.Y.), Seunghyun Song (Albany, N.Y.) and Kang-ill Seo (Albany, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A multi-stack semiconductor device formed to cover a plurality of gate pitches includes: a 1st transistor; a 2nd transistor formed at a right side of the 1st transistor, and isolated from the 1st transistor by a 1st portion of a diffusion break structure; a 3rd transistor formed vertically above or below the 1st transistor; and ...