ALEXANDRIA, Va., Feb. 26 -- United States Patent no. 12,236,101, issued on Feb. 25, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).
"System and method for memory bad block mamagement" was invented by Hyunseok Kim (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory system includes a memory module and a memory controller to control semiconductor memory devices in the memory module. Each of the semiconductor memory devices provides the memory controller with an address of at least a defective memory cell row unrepairable with a redundancy resource in a memory cell array as unrepairable address information. The memory controller allocates a portion of a normal ...