ALEXANDRIA, Va., Feb. 26 -- United States Patent no. 12,237,386, issued on Feb. 25, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Semiconductor device and method for fabricating the same" was invented by Sun Ki Min (Seoul, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor includes a gate structure on a substrate and including a gate electrode, a source/drain pattern on a side surface of the gate electrode, a source/drain contact connected to the source/drain pattern, a first etching stop film structure on the source/drain contact and the gate structure, the first etching stop film structure including a first lower etching stop film and a silicon nitride film ...