ALEXANDRIA, Va., Feb. 26 -- United States Patent no. 12,237,210, issued on Feb. 25, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Semiconductor device" was invented by Chae Ho Na (Changwon-si, South Korea), Sung Soo Kim (Hwaseong-si, South Korea), Gyu Hwan Ahn (Gunpo-si, South Korea) and Dong Hyun Roh (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate, a first fin, and a second fin. The first and second fins are spaced apart from each other in a first direction on the substrate and extend in a second direction intersecting the first direction. The semiconductor device further includes a first shallow trench formed between...