US Patent Issued to SAMSUNG ELECTRONICS on Feb. 25 for "Method of forming contact included in semiconductor device" (South Korean Inventors)

ALEXANDRIA, Va., Feb. 26 -- United States Patent no. 12,238,923, issued on Feb. 25, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).

"Method of forming contact included in semiconductor device" was invented by Suncheul Kim (Hwaseong-si, South Korea), Donghyun Lee (Gwacheon-si, South Korea) and Uihyoung Lee (Hwaseong-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A contact forming method may include providing a semiconductor substrate including a silicon oxide film to an interior of a chamber, subjecting a surface of the silicon oxide film to plasma nitrification treatment, supplying a source gas including TiCl4 and H2 onto the silicon oxide film subjected to the plasma...