ALEXANDRIA, Va., Feb. 26 -- United States Patent no. 12,237,324, issued on Feb. 25, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).
"Integrated circuit device" was invented by Jangeun Lee (Hwaseong-si, South Korea), Minjoo Lee (Anyang-si, South Korea), Eunyoung Lee (Hwaseong-si, South Korea) and Minsik Kim (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit device according may include a plurality of gate structures embedded in a substrate, a direct contact on the substrate between the plurality of gate structures, and a bit line electrode layer on the direct contact. The bit line electrode layer has a thickness of about 10 nm to 30 nm. The bit...