ALEXANDRIA, Va., Feb. 26 -- United States Patent no. 12,237,383, issued on Feb. 25, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).
"Integrated circuit device" was invented by Dohee Kim (Seoul, South Korea), Gyeom Kim (Hwaseong-si, South Korea), Jinbum Kim (Seoul, South Korea), Jaemun Kim (Seoul, South Korea) and Seunghun Lee (Hwaseong-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit (IC) device includes a fin-type active region extending in a first lateral direction on a substrate, a gate line extending in a second lateral direction on the fin-type active region, an insulating spacer covering a sidewall of the gate line, a source/drain region at a...