ALEXANDRIA, Va., Feb. 19 -- United States Patent no. 12,232,430, issued on Feb. 18, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (South Korea).
"Switching device having bi-directional drive characteristics and method of operating same" was invented by Yun Heub Song (Seoul, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed is a bi-directional two-terminal phase-change memory device using a tunneling thin film and a method of operating the same. According to an one embodiment, a phase-change memory device comprises: a first electrode; a second electrode; and a phase-change memory cell interposed between the first electrode and the second electrode, wherein the phase-change memory cell compri...