US Patent Issued to SAMSUNG ELECTRONICS on Feb. 18 for "Semiconductor device with crack-preventing structure" (South Korean Inventors)

ALEXANDRIA, Va., Feb. 19 -- United States Patent no. 12,230,587, issued on Feb. 18, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (South Korea).

"Semiconductor device with crack-preventing structure" was invented by Minjung Choi (Suwon-si, South Korea), Yeonjin Lee (Suwon-si, South Korea), Jeonil Lee (Suwon-si, South Korea) and Jongmin Lee (Hwaseong-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes; a semiconductor substrate including a chip area and a scribe lane area, a low-k layer on the semiconductor substrate, an interlayer insulating layer on the low-k layer, a trench area in the scribe lane area, a gap-fill insulating layer in the trench area and vertically ...