ALEXANDRIA, Va., Feb. 19 -- United States Patent no. 12,230,651, issued on Feb. 18, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Photodetector and image sensor including the same" was invented by Sungjun Kim (Incheon, South Korea), Jin-Hong Park (Suwon-si, South Korea), Sunghun Lee (Suwon-si, South Korea) and Keun Heo (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A photodetector includes a gate electrode extending in a first direction, a ferroelectric layer on the gate electrode and maintaining a state of polarization formed by a gate voltage applied to the gate electrode, a light absorbing layer on the ferroelectric layer and extending in a second direction ...