ALEXANDRIA, Va., Feb. 19 -- United States Patent no. 12,230,330, issued on Feb. 18, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Nonvolatile memory device for increasing reliability of data detected through page buffer" was invented by Myeongwoo Lee (Hwaseong-si, South Korea), Chaehoon Kim (Gwacheon-si, South Korea), Jihwan Kim (Suwon-si, South Korea) and Jungho Song (Gwangmyeong-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A nonvolatile memory device includes a memory cell array in a first semiconductor layer and including a first memory cell connected to a first word line and a first bit line and a second memory cell connected to the first word line and a second ...