US Patent Issued to SAMSUNG ELECTRONICS on Feb. 18 for "Memory device configured to alternately apply an erase voltage and an inhibit voltage" (South Korean Inventors)

ALEXANDRIA, Va., Feb. 19 -- United States Patent no. RE50,306, issued on Feb. 18, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (South Korea).

"Memory device configured to alternately apply an erase voltage and an inhibit voltage" was invented by Sang Wan Nam (Hwaseong-si, South Korea), Yong Hyuk Choi (Suwon-si, South Korea), Jun Yong Park (Seoul, South Korea) and Jung No Im (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device comprises: a first memory cell, and a second memory cell different from the first memory cell, wherein the first memory cell and the second memory cell are included in same memory block; a first word line connected to the first memory cell; a second word...