US Patent Issued to SAMSUNG ELECTRONICS on Feb. 18 for "Interconnection structure of integrated circuit semiconductor device" (South Korean Inventors)

ALEXANDRIA, Va., Feb. 19 -- United States Patent no. 12,230,568, issued on Feb. 18, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).

"Interconnection structure of integrated circuit semiconductor device" was invented by Jungha Lee (Hwaseong-si, South Korea) and Woojin Jang (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "An interconnection structure of an integrated circuit semiconductor device includes: a first conductive layer on a semiconductor substrate; an interlayer insulating layer on the first conductive layer and including a trench and a via hole; a via layer in the via hole, the via layer penetrating the interlayer insulating layer through a bottom of the t...