US Patent Issued to SAMSUNG ELECTRONICS on Feb. 18 for "Integrated circuit with continuous active region and raised source/drain region" (South Korean Inventors)

ALEXANDRIA, Va., Feb. 19 -- United States Patent no. 12,230,684, issued on Feb. 18, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Integrated circuit with continuous active region and raised source/drain region" was invented by Jinha Park (Yongin-si, South Korea) and Youngju Choi (Hwaseong-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "According to example embodiments, an integrated circuit includes a continuous active region extending in a first direction, a tie gate electrode extending in a second direction crossing the first direction on the continuous active region, a source/drain region provided adjacent the tie gate electrode, a tie gate contact extending in a th...