US Patent Issued to SAMSUNG ELECTRONICS on Feb. 18 for "Flash memory device and data recover read method thereof" (South Korean Inventors)

ALEXANDRIA, Va., Feb. 19 -- United States Patent no. 12,230,329, issued on Feb. 18, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (South Korea).

"Flash memory device and data recover read method thereof" was invented by Eunhyang Park (Suwon-si, South Korea), Joonsuc Jang (Suwon-si, South Korea), Se Hwan Park (Suwon-si, South Korea) and Ji-Sang Lee (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A flash memory device includes a memory cell array connected with word lines and control logic that performs threshold voltage compensation on the word lines through a data recover read operation. When a word line on which programming is performed after a selected word line is a dummy word line, t...