US Patent Issued to SAMSUNG ELECTRONICS on Feb. 17 for "Semiconductor device with variable gate-to-channel spacing" (South Korean Inventors)

ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,291, issued on Feb. 17, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Semiconductor device with variable gate-to-channel spacing" was invented by Wukang Kim (Suwon-si, South Korea), Sejun Park (Yongin-si, South Korea), Hyoje Bang (Anyang-si, South Korea), Jaeduk Lee (Seongnam-si, South Korea) and Junghoon Lee (Hwaseong-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device including a stack structure including gate layers and interlayer insulating layers spaced apart in a vertical direction, a channel hole penetrating the stack structure in the vertical direction, a core region extending within...