ALEXANDRIA, Va., Feb. 12 -- United States Patent no. 12,224,214, issued on Feb. 11, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (South Korea).

"Method of fabricating a semiconductor device" was invented by Seongkeun Cho (Suwon-si, South Korea), Eunhee Jeang (Paju-si, South Korea), Jihun Lee (Hwaseong-si, South Korea), Gyumin Jeong (Ulsan, South Korea), Hyunjae Kang (Gunpo-si, South Korea) and Taemin Earmme (Hwaseong-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of fabricating a semiconductor device is disclosed. The method may include forming a parent pattern, forming an upper thin film on the parent pattern, forming a child pattern on the upper thin film, measuring a diffraction l...